band gap engineering 带隙能量
Band Gap Engineering of ZnO 氧化锌的能带工程
band gap and strain engineering 能带和应变工程
Si_(1-x)Ge_x alloys are important semiconductor materials for the microelectronics industry, due to the possibility of band-gap engineering leading to high-speed electronic devices and the compatibility with conventional silicon technology.
Si_(1-x)Ge_x合金是一种新型半导体材料,它与传统的Si工艺相兼容,又能实现“能带工程”,是现在和未来的微电子产业中重要半导体材料。
参考来源 - 硅和硅锗合金半导体中碳相关缺陷和自间隙缺陷的从头计算研究·2,447,543篇论文数据,部分数据来源于NoteExpress
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